[科技新闻] Global SiC Power Devices Market Research Report 2020

QYResearch

Global SiC Power Devices Market Research Report 2020

QY Research has recently curated a research report titled, Global SiC Power Devices Market Research Report 2020. The report is structured on primary and secondary research methodologies that derive historic and forecast data. The global SiC Power Devices market is growing remarkably fast and is likely to thrive in terms of volume and revenue during the forecast period. Readers can gain insight into the various opportunities and restraints shaping the market. The report demonstrates the progress and bends that will occur during the forecast period.

! @% Z& p/ z; x% u

rs238848.rs.hosteurope.de; n7 E9 V( \; p1 k3 `% Y- g

6 w# Z) j4 p7 q' }

A power device is a semiconductor, which is used as a switch or a rectifier in the power electronic system. SiC is a compound semiconductor comprised of silicon and carbon and has 10 times the dielectric breakdown field strength, bandgap, and thermal conductivity than silicon. The special characteristics of SiC power devices include high-temperature operation stability, high thermal conductivity, high-energy bandgap, and faster switching time. These characteristics of SiC power devices are encouraging original equipment manufacturers (OEMs) to adopt these devices over traditional Si power devices.

Global SiC Power Components Key Players:

, G: x0 m* F4 u2 ~! @- d

Players

Products

( R. W3 j+ w: B5 H5 m% K# ]

Infineon

CoolSiC™

8 H) X( l/ K4 }7 P

Mitsubishi Electric

DIPIPM™/ DIPPFC™

4 W( r( @4 ~' Q0 W

STMicroelectronics

- X* M: ?* K" t2 U

Fuji Electric

: |; }; E/ n# ^# i

Toshiba

Plastic Case Module IEGTs (PMIs)/ Hybrid   SiC-SBD Modules

- z' {; U5 i6 O" ]( S

ON Semiconductor

TO-247/D2PAK /DPAK

6 w* G6 Q' |; d: Y! ~rs238848.rs.hosteurope.de

Vishay Intertechnology

FREDPt®

$ y2 t! m9 s: ~- R4 J+ I/ Trs238848.rs.hosteurope.de# F% W- Q9 M3 ]4 d/ V& B# ~. j- Q

Figure 1：Power Semiconductor Market Share Datebase 2019

The world's top five SiC Power Components manufacturing companies are Infineon, ON Semiconductor Corp, STMicroelectronics N.V. Mitsubishi Electric Corp, and Vishay Intertechnology. With approximately 43.5% of the world's share, Infineon Germany has become the world's number one semiconductor manufacturer with approximately 19.9%.

Figure 2：History of SiC Development and Its Major Companies

人在德国 社区' e. G* E' o5 Q& I. C; P  r, U

Figure 3：Ranking of Major SiC MOSFET Patent Application Companies

Figure 4：Global SiC Power Components Application Market Share

+ z( K7 D, L- G4 t4 i7 @4 H- mrs238848.rs.hosteurope.de

In terms of applications, electric vehicle applications account for a large proportion, accounting for about one-thirds of the total. And Power Supplies and Photovoltaics application technology is developing rapidly, and demand has been increasing.

6 {% e# G5 g9 N* I9 G

Infineon's 2018 electric vehicle application cumulative revenue is $ 1.9billion. It accounts for 1/3 of total SiC Power Components Application revenue.

Figure 6：Global SiC Power Components Revenue (Million USD) by Company

rs238848.rs.hosteurope.de* o( v5 N( o" D' _

Figure 7：Forecast of Global SiC Component Market Size

rs238848.rs.hosteurope.de2 e# k1 v' m: q* E; ]% l* q$ y

, z. C) P7 x* U0 |/ d

. W/ m8 O/ B1 d  O8 V

SiC Power Components Downstream Industry

New Energy Vehicle

High-voltage Applications

LED

Figure 8：New Energy Vehicle Sales Forecast (Unit: 10,000)

1 h+ @' p5 Y! E5 O7 [; Q) a- {

As electric vehicles and other systems grow, the silicon carbide (SiC) power semiconductor market is experiencing a sudden surge in demand.

SiC-based power semiconductors are used in on-board charging devices for electric vehicles, and this technology is entering a key part of the system, traction inverters. The traction inverter provides traction to the electric motor to propel the vehicle forward. For this application, SiC power devices are used in some models.

Figure 9：Relationship between On-Resistance and Breakdown Voltage of Si, SiC and GaN
4 B$ D( u# `+ E$ ]

% }7 W' I6 S9 `3 ]7 q人在德国 社区

Figure 10：Operating Frequency and Operating Voltage of Various Power Semiconductor Devices

% f: {, z" A% y; n& z
& G' A3 M8 A3 k

7 {1 A+ O/ b" J, q5 E

SiC Compared with traditional silicon-based devices, the breakdown field strength of SiC is 10 times that of traditional silicon-based devices, and the thermal conductivity is 3 times that of traditional silicon-based devices. It is very suitable for high-voltage applications such as power supplies, solar inverters, trains, etc. And wind turbines. In addition, SiC is also used in the manufacture of LEDs.

The main application areas of silicon carbide are photovoltaic systems, industrial power supplies, and electric vehicle charging infrastructure. The advantages of silicon carbide systems are obvious. The penetration of industrial applications is currently beginning, mainly uninterruptible power supplies; there are also initial designs in important variable-speed drive markets (servo motors, robots). These designs also benefit from the special performance of new technologies. Achieve very economical, high-performance implementations. We also consider auxiliary devices on trains to be a promising application. In the medium to long term, hybrid or purely electric trains also have great potential. Applications here are, for example, drive systems for mainly inverters and on-board chargers.

Global SiC Power Devices Market: Drivers and Restrains

The research report has incorporated the analysis of different factors that augment the market’s growth. It constitutes trends, restraints, and drivers that transform the market in either a positive or negative manner. This section also provides the scope of different segments and applications that can potentially influence the market in the future. The detailed information is based on current trends and historic milestones. This section also provides an analysis of the volume of sales about the global market and also about each type from 2015 to 2026. This section mentions the volume of sales by region from 2015 to 2026. Pricing analysis is included in the report according to each type from the year 2015 to 2026, manufacturer from 2015 to 2020, region from 2015 to 2020, and global price from 2015 to 2026.

A thorough evaluation of the restrains included in the report portrays the contrast to drivers and gives room for strategic planning. Factors that overshadow the market growth are pivotal as they can be understood to devise different bends for getting hold of the lucrative opportunities that are present in the ever-growing market. Additionally, insights into market expert’s opinions have been taken to understand the market better.

Global SiC Power Devices Market: Segment Analysis

The research report includes specific segments such as application and product type. Each type provides information about the sales during the forecast period of 2015 to 2026. The application segment also provides revenue by volume and sales during the forecast period of 2015 to 2026. Understanding the segments helps in identifying the importance of different factors that aid the market growth.

Global SiC Power Devices Market: Regional Analysis

The research report includes a detailed study of regions of North America, Europe, China, and Japan alone. The report has been curated after observing and studying various factors that determine regional growth such as economic, environmental, social, technological, and political status of the particular region. Analysts have studied the data of revenue, sales, and manufacturers of each region. This section analyses region-wise revenue and volume for the forecast period of 2015 to 2026. These analyses will help the reader to understand the potential worth of investment in a particular region.

Global SiC Power Devices Market: Competitive Landscape

This section of the report identifies various key manufacturers of the market. It helps the reader understand the strategies and collaborations that players are focusing on combat competition in the market. The comprehensive report provides a significant microscopic look at the market. The reader can identify the footprints of the manufacturers by knowing about the global revenue of manufacturers, the global price of manufacturers, and sales by manufacturers during the forecast period of 2015 to 2019.

Following are the segments covered by the report are:

SiC Power Components Diodes

SiC Power Components Modules

SiC Power Components Transistors

Other

By Application:

Electric Vehicle

Power Supplies

Photovoltaics

Others

Key Players:

The Key manufacturers that are operating in the global SiC Power Devices market are:

ROHM Semiconductor

Infineon

Mitsubishi Electric Corp

STMicroelectronics N.V.

Toshiba Corp

Fuji Electric Co Ltd

Infineon Technologies

ON Semiconductor Corp

Competitive Landscape

The analysts have provided a comprehensive analysis of the competitive landscape of the global SiC Power Devices market with the company market structure and market share analysis of the top players. The innovative trends and developments, mergers and acquisitions, product portfolio, and new product innovation to provide a dashboard view of the market, ultimately providing the readers accurate measure of the current market developments, business strategies, and key financials.

for more information & t/ ]3 f* g0 }$ p" F7 Q
please go to https://www.qyresearch.com/index/detail/1557434/global-sic-power-devices-market

and you can go https://www.qyresearch.comto know more and more rs238848.rs.hosteurope.de- C0 S; m* `9 Y) R
if you need any help you can contact 6 n+ }/ ^7 n( w3 U6 T& w' M
qifeifei@qyresearch.com / telephone number ：18910840196
/ Y% h1 `% O4 l& w8 o) `00861082945717
, U. x. K9 I6 Z- S: u0 c2 d8 ?' Y人在德国 社区QY Research support best market reports for you.